Inverted Hysteresis in n-i-p and p-i-n Perovskite Solar Cells

Thumbnail Image
Publication date
Reading date
Event date
Start date of the public exhibition period
End date of the public exhibition period
Authors of photography
Person who provides the photography
Journal Title
Journal ISSN
Volume Title
Research Projects
Organizational Units
Journal Issue
A combination of experimental studies and drift-diffusion modeling has been used to investigate the appearance of inverted hysteresis, where the area under the J-V curve for the reverse scan is lower than in the forward scan, in perovskite solar cells. It is found that solar cells in the p-i-n configuration show inverted hysteresis at a sufficiently high scan rate, whereas n-i-p solar cells tend to have normal hysteresis. By examining the influence of the composition of charge transport layers, the perovskite film crystallinity and the preconditioning treatment, the possible causes of the presence of normal and inverted hysteresis are identified. Simulated current-voltage measurements from a coupled electron-hole-ion driftdiffusion model that replicate the experimental hysteresis trends are presented. It is shown that during current-voltage scans, the accumulation and depletion of ionic charge at the interfaces modifies carrier transport within the perovskite layer and alters the injection and recombination of carriers at the interfaces. Additionally, it is shown that the scan rate dependence of the degree of hysteresis has a universal shape, where the crossover scan rate between normal and inverted hysteresis depends on the ion diffusion coefficient and the nature of the transport layers.
Doctoral program
Related publication
Research projects
Bibliographic reference
Energy Technology (2022), 2200507
Photography rights